Extracting Parameters of OFET Before and After Threshold Voltage Using Genetic Algorithms

Imad Benacer; Zohir Dibi

doi:10.1007/s11633-015-0918-6

Volume 13 Issue 4

August 2016

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Imad Benacer and Zohir Dibi. Extracting Parameters of OFET Before and After Threshold Voltage Using Genetic Algorithms. International Journal of Automation and Computing, vol. 13, no. 4, pp. 382-391, 2016. https://doi.org/10.1007/s11633-015-0918-6

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Extracting Parameters of OFET Before and After Threshold Voltage Using Genetic Algorithms

doi: 10.1007/s11633-015-0918-6

Advanced Electronics Laboratory, Department of Electronics, University of Batna, Avenue Chahid Boukhlouf Mohamed El Hadi, Batna 05000, Algeria
Advanced Electronics Laboratory, Department of Electronics, University of Batna, Avenue Chahid Boukhlouf Mohamed El Hadi, Batna 05000, Algeria

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Author Bio:
Zohir Dibi received the B.Sc.degree in electronics engineering from the University of Sitif, Algeria in 1994, and received the M.Eng.and Ph.D.degrees from the University of Constantine, Algeria, in 1998 and 2002, respectively.He has been the head of Electronics Department.He is currently an assistant professor in Electronics Department and vice-dean of the Faculty of Engineering at Batna University, Algeria.His research interests include neural networks, sensors, smart sensors, and organic devices.E-mail:zohir_dibi@yahoo.fr
Corresponding author: Imad Benacer received the B. Eng. and M. Sc. degrees from University of Batna, Algeria in 2006 and 2010, respectively. He is currently a Ph. D. degree candidate related to organic transistor. His research interests include microelectronic devices, organic transistor, modeling, and artificial intelligence. E-mail: benacerimad@gmail.com (Corresponding author) ORCID iD: 0000-0002-3063-9695
Received Date: 2014-03-28
Accepted Date: 2014-07-01
Publish Online: 2016-06-29
Publish Date: 2016-08-01

Abstract

Abstract

This paper presents a compact analytical model for the organic field-effect transistors (OFETs), which describes two main aspects, the first one is related to the behavior in above threshold regime, while the other corresponds to the below threshold regime. The total drain current in the OFET device is calculated as the sum of two components, with the inclusion of a smooth transition function in order to take into account both regions using a single expression. A genetic algorithm based approach (GA) is investigated as a parameter extraction tool in the case of the compact OFET model to find the parameters' values from experimental data such as: mobility enhancement factor γ, threshold voltage V_Th, subthreshold swing S, channel length modulation γ, and knee region sharpness m. The comparison of the developed current model with the experimental data shows a good agreement in terms of the transfer and the output characteristics. Therefore, the GA based approach can be considered as a competitive candidate compared to the direct method.
- Organic field effect transistor (OFET),
- compact model,
- parameter extraction,
- genetic algorithm (GA),
- threshold regime

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References

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Extracting Parameters of OFET Before and After Threshold Voltage Using Genetic Algorithms

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